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PDB0854S - Dual N-Channel MOSFET

PDB0854S Description

100V Dual N-Channel MOSFETs PDB0854S General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDB0854S Features

* 100V,1.2A, RDS(ON) =390mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching

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Datasheet Details

Part number
PDB0854S
Manufacturer
Potens semiconductor
File Size
437.64 KB
Datasheet
PDB0854S-Potenssemiconductor.pdf
Description
Dual N-Channel MOSFET

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Dual N-Channel MOSFET Potens semiconductor
Potens semiconductor PDB0854S-like datasheet